Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment

被引：5
作者：
Kang, EK
Jang, HK
Lee, SK
Park, ER
Lee, CE [1 ]
Kim, KM
Noh, SJ
Yeom, SJ
机构：
[1] Korea Univ, Dept Phys, Seoul 136701, South Korea
[2] Dankook Univ, Dept Appl Phys, Seoul 140714, South Korea
[3] Hynix Semicond Inc, Kyongki 467701, South Korea
来源：
CURRENT APPLIED PHYSICS | 2002年 / 2卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
low-temperature processing; PZT; thin films; oxygen-plasma treatment;
D O I：
10.1016/S1567-1739(02)00150-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
dFerroelectric thin films of sol-gel-derived Pb(Zr-x, Ti1-x)O-3 (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 degreesC, followed by oxygen-plasma treatment at 200 degreesC, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 degreesC gave rise to the ferroelectric hysteresis. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：407 / 409
页数：3
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