Heavy atomic-layer doping of nitrogen in Si1-xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD

被引：6

作者：

Kawashima, Tomoyuki ^{[1
]}

Sakuraba, Masao ^{[1
]}

Tillack, Bernd ^{[2
,3
]}

Murota, Junichi ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] IHP, D-15236 Frankfurt, Oder, Germany

[3] Tech Univ Berlin, D-10587 Berlin, Germany

来源：

THIN SOLID FILMS | 2010年 / 518卷

关键词：

Chemical vapor deposition (CVD); Atomic-layer doping; SiGe; N; Thermal stability; X-ray photoelectron spectroscopy (XPS); RESONANT-TUNNELING DIODES; ELECTRICAL CHARACTERISTICS; TEMPERATURE; SILICON;

D O I：

10.1016/j.tsf.2009.10.056

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N atomic-layer doping in a nanometer-order Si/Si1-xGex/Si(100) heterostructure using ultraclean low-pressure chemical vapor deposition and its thermal stability at 650 degrees C were investigated. In the Si0.5Ge0.5 epitaxial layer, it is found that a N doping dose of 6 x 10(14) cm(-2) can be confined within an about 1.5 nm-thick region even after 650 degrees C heat treatment in contrast to the result for Si cap layer growth on the thermally nitrided Si(100) with a N doping dose of 6 x 10(14) cm(-2) which was found to be amorphous. Moreover, it is suggested that the confined N atoms in Si1-xGex preferentially form Si-N bonds and that formation Of Si3N4 is enhanced by the heat treatment at 650 degrees C. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：S62 / S64

页数：3

共 11 条

[1] Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(100) by ultraclean low-pressure CVD system
Tanno, Hiroki
Sakuraba, Masao
Tillack, Bernd
Murota, Junichi
SOLID-STATE ELECTRONICS, 2009, 53 (08) : 877 - 879
[2] Si epitaxial growth on self-limitedly B adsorbed Si1-xGex(100) by ultraclean low-pressure CVD system
Ishibashi, Kiyohisa
Sakuraba, Masao
Murota, Junichi
Inokuchi, Yasuhiro
Kunii, Yasuo
Kurokawa, Harushige
THIN SOLID FILMS, 2008, 517 (01) : 229 - 231
[3] Heavy carbon atomic-layer doping at Si1 - xGex/Si heterointerface
Hirano, Tomoya
Sakuraba, Masao
Tillack, Bernd
Murota, Junichi
THIN SOLID FILMS, 2010, 518 : S222 - S225
[4] Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system
Yokogawa, Takashi
Ishibashi, Kiyohisa
Sakuraba, Masao
Murota, Junichi
Inokuchi, Yasuhiro
Kunii, Yasuo
Kurokawa, Harushige
APPLIED SURFACE SCIENCE, 2008, 254 (19) : 6090 - 6093
[5] Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition
Tanno, Hiroki
Sakuraba, Masao
Tillack, Bernd
Murota, Junichi
APPLIED SURFACE SCIENCE, 2008, 254 (19) : 6086 - 6089
[6] Atomic-layer doping in Si1-xGex/Si/Si1-xGex heterostructures by two-step solid-phase epitaxy
Sugii, N
Nakagawa, K
Yamaguchi, S
Miyao, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2424 - 2426
[7] Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD
Nosaka, Takayuki
Sakuraba, Masao
Tillack, Bernd
Murota, Junichi
THIN SOLID FILMS, 2010, 518 : S140 - S142
[8] Doping and electrical characteristics of in situ heavily B-doped Si1-xGex films epitaxially grown using ultraclean LPCVD
Moriya, A
Sakuraba, M
Matsuura, T
Murota, J
THIN SOLID FILMS, 1999, 343 : 541 - 544
[9] Formation and Characterization of Strained Si1-xGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating
Ueno, Naofumi
Sakuraba, Masao
Murota, Junichi
Sato, Shigeo
ULSI PROCESS INTEGRATION 8, 2013, 58 (09): : 207 - 211
[10] Different architectures of relaxed Si1-xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics
Raissi, M.
Regula, G.
Belgacem, C. Hadj
Rochdi, N.
Bozzo-Escoubas, S.
Coudreau, C.
Hollaender, B.
Fnaiech, M.
D'Avitaya, F. A.
Lazzari, J. -L.
JOURNAL OF CRYSTAL GROWTH, 2011, 328 (01) : 18 - 24

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