Second and third harmonic generation in few-layer gallium telluride characterized by multiphoton microscopy

被引：61
|
作者：
Susoma, Jannatul [1 ]
Karvonen, Lasse [1 ]
Saynatjoki, Antti [1 ,2 ]
Mehravar, Soroush [3 ]
Norwood, Robert A. [3 ]
Peyghambarian, Nasser [1 ,2 ,3 ]
Kieu, Khanh [3 ]
Lipsanen, Harri [1 ]
Riikonen, Juha [1 ]
机构：
[1] Aalto Univ, Dept Micro & Nanosci, POB 13500, FI-00076 Espoo, Finland
[2] Univ Eastern Finland, Inst Photon, Yliopistokatu 7, FI-80100 Joensuu, Finland
[3] Univ Arizona, Coll Opt Sci, 1630 E Univ Blvd, Tucson, AZ 85721 USA
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 07期
基金：
芬兰科学院;
关键词：
GATE; NANOSHEETS; GROWTH;
D O I：
10.1063/1.4941998
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the nonlinear optical properties of few-layer GaTe studied by multiphoton microscopy. Second and third harmonic generation from few-layer GaTe flakes were observed in this study with the laser pump wavelength of 1560 nm. These processes were found to be sensitive to the number of GaTe layers. The second-and third-order nonlinear susceptibilities of 2.7 x 10(-9) esu (1.15 pm/V) and 1.4 x 10(-8) esu (2 x 10(-16) m(2)/V-2) were estimated, respectively. (C) 2016 Author(s).
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页数：5
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