Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2

被引：346

作者：

Chen, Wei ^{[1
,2
,3
]}

Zhao, Jing ^{[1
,2
]}

Zhang, Jing ^{[1
,2
]}

Gu, Lin ^{[1
,2
,4
]}

Yang, Zhenzhong ^{[1
,2
]}

Li, Xiaomin ^{[1
,2
]}

Yu, Hua ^{[1
,2
]}

Zhu, Xuetao ^{[1
,2
]}

Yang, Rong ^{[1
,2
]}

Shi, Dongxia ^{[1
,2
]}

Lin, Xuechun ^{[5
]}

Guo, Jiandong ^{[1
,2
]}

Bai, Xuedong ^{[1
,2
]}

Zhang, Guangyu ^{[1
,2
,4
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Gannan Normal Univ, Coll Phys & Elect Informat, Ganzhou 341000, Jiangxi, Peoples R China

[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China

[5] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2015年 / 137卷 / 50期

关键词：

LAYER MOS2; LARGE-AREA; GRAIN-BOUNDARIES; PHASE GROWTH; THIN-LAYERS; PIEZOELECTRICITY; EXFOLIATION; TRANSITION; DEFECTS; SIO2;

D O I：

10.1021/jacs.5b10519

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Mono layer molybdenum disulfide (MoS2) has attracted great interest due to its potential applications in electronics and optoelectronics. Ideally, single-crystal growth over a large area is necessary to preserve its intrinsic figure of merit but is very challenging to achieve. Here, we report an oxygen-assisted chemical vapor deposition method for growth of single-crystal monolayer MoS2. We found that the growth of MoS2 domains can be greatly improved by introducing a small amount of oxygen into the growth environment. Triangular monolayer MoS2 domains can be achieved with sizes up to similar to 350 mu m and a room-temperature mobility up to similar to 90 cm(2)/(V.s) on SiO2. The role of oxygen is not only to effectively prevent the poisoning of precursors but also to eliminate defects during the growth. Our work provides an advanced method for high-quality single-crystal monolayer MoS2 growth.

引用

页码：15632 / 15635

页数：4

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