A novel high-conductivity IGBT (HiGT) with a short circuit capability

被引：33

作者：

Mori, M ^{[1
]}

Uchino, Y ^{[1
]}

Sakano, J ^{[1
]}

Kobayashi, H ^{[1
]}

机构：

[1] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 3191292, Japan

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new high-conductivity IGBT (HiGT) with a DMOS structure and an n-type hole-barrier layer surrounding a p-layer. The hole-barrier layer acts as a barrier to prevent the holes from flowing into the p-layer and stores them in the n(-)-layer. The HiGT provides a collector-emitter saturation voltage (V-CE(sat)) of about 1 V lower than that of the conventional IGBT, while it maintains a high blocking voltage of 3.3 kV by controlling the carrier concentration of the hole-barrier layer. The HiGT has tough short circuit capability of more than 10 mu s at 125 degrees C with a saturation current similar to that of the conventional IGBT.

引用

页码：429 / 432

页数：4