Temperature-dependent photoluminescence of undoped, N-doped and N-In codoped ZnO thin films

Temperature-dependent photoluminescence properties of undoped, N-doped and N-In codoped p-type ZnO thin films have been investigated in detail. The yielded temperature dependences of ultraviolet peak energy, width and intensity for several resolved emissions exhibit the different carrier recombination processes associated with doping mechanisms. We have revealed the acceptor binding energy of 113 meV, 140 meV and 112 meV and donor one of 56 meV, 82 meV and 112 meV for undoped, N-doped and N-In codoped ZnO, respectively, together with the broadening of the acceptor levels in N-doped and N-In codoped ZnO. We have also clarified the origin of the ZnO deep-level visible emission.