BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device

被引：15

作者：

Aoulaiche, Marc ^{[1
]}

Collaert, Nadine ^{[1
]}

Degraeve, Robin ^{[1
]}

Lu, Zhichao ^{[2
]}

De Wachter, Bart ^{[1
]}

Groeseneken, Guido ^{[1
]}

Jurczak, Malgorzata ^{[1
]}

Altimime, Laith ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 12期

关键词：

Bipolar junction transistor (BJT); bulk FinFET; cycling; endurance; floating-body cell (FBC); one-transistor random access memory (1T-RAM); reliability;

D O I：

10.1109/LED.2010.2079313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, endurance is investigated on one bulk FinFET transistor capacitorless random access memory, using the bipolar junction transistor (BJT) programming mode. For the first time, it is shown that endurance is an issue using the BJT-mode programming. The dominant degradation is due to the interface state generation by impact ionization used to write "1." This degradation leads to the gate-induced drain leakage current increase, which results in shifts of the read state "0" current.

引用

页码：1380 / 1382

页数：3

共 12 条

[1] Floating Body Cell (FBC) Memory for 16-nm Technology with Low Variation on Thin Silicon and 10-nm BOX [J].