Comparison of high-voltage 4H-SiC insulated-gate bipolar transistor (IGBT) and MOS-gated bipolar transistor (MGT)

被引：2

作者：

Zhu, L ^{[1
]}

Balachandran, S ^{[1
]}

Chow, TP ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

4H; SiC; IGBT; transistor; MGT; simulation;

D O I：

10.4028/www.scientific.net/MSF.483-485.917

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2-dimensional, numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a much higher conductivity modulation in the drift region.

引用

页码：917 / 920

页数：4

共 4 条

[1]

Chow TP, 1998, ELEC SOC S, V98, P16

[2] High temperature SiC trench gate p-IGBTs [J].

Singh, R ;

Ryu, SH ;

Capell, DC ;

Palmour, JW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) :774-784

[3] A NEW MOS-GATE BIPOLAR-TRANSISTOR FOR POWER SWITCHES [J].

TANAKA, T ;

YASUDA, Y ;

OHAYASHI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (12) :2041-2045

[4] Design and simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC [J].

Tang, Y ;

Ramungul, N ;

Chow, TP .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1415-1418

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