Photopumped infrared vertical-cavity surface-emitting laser

被引：39
作者：
Hadji, E
Bleuse, J
Magnea, N
Pautrat, JL
机构：
[1] Département de Recherche Fondamentale Sur la Matière Condensée, SP2M/PSC, CENG, F 38054 Grenoble Cedex 9, 17, av. des Martyrs
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 18期
关键词：
D O I：
10.1063/1.115827
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3 lambda/4 thick Cd(0.75)HE(0.25)Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy, The top mirror is a 7-period YF3/ZnS dielectric stack. The cavity quality factor is Q=350. This heterostructure VCSEL operates at 3.06 mu m with a measured power density threshold of 45 kW/cm(2) at 10 K. (C) 1996 American Institute of Physics.
引用
收藏
页码：2480 / 2482
页数：3
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