Vacancies and adatoms complexes on silicon surface

被引：0
|
作者：
Guo, HS
Souda, R
机构：
[1] Beijing Polytech Univ, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
[2] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 305, Japan
来源：
APPLIED SURFACE SCIENCE | 2001年 / 172卷 / 3-4期
关键词：
scanning tunneling microscopy; silicon surface; Ni-induced reconstruction;
D O I：
10.1016/S0169-4332(00)00872-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
By intentional introduction of Ni on Si(1 0 0) and Si(1 1 1) we have observed the reconstruction of the both surfaces. Scanning tunneling microscopy studies reveal morphologies of the Si(1 0 0)-2 x n structure, which are partially different from those of the reported up to now. Heterogeneous reconstruction has been also observed on Sill 1 I) surface: the 7 x 7 terraces and terraces being composed of disordered adatoms distribute alternatively on the surface. We present the results and give our primary exploration to their formation mechanism. (C) 2001 Elsevier Science B.V. Ali rights reserved.
引用
收藏
页码：351 / 355
页数：5
相关论文
共 50 条
  • [21] Tuning the Electronic and Magnetic Properties of Phosphorene by Vacancies and Adatoms
    Srivastava, Pooja
    Hembram, K. P. S. S.
    Mizuseki, Hiroshi
    Lee, Kwang-Ryeol
    Han, Sang Soo
    Kim, Seungchul
    JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (12): : 6530 - 6538
  • [22] Role of vibrational entropy in surface diffusion: adatoms and vacancies on Ag(100), Cu(100), and Ni(100)
    Kurpick, Ulrike
    Rahman, Talat. S.
    Surface Science, 1999, 427-428 : 15 - 21
  • [23] The role of vibrational entropy in surface diffusion:: adatoms and vacancies on Ag(100), Cu(100), and Ni(100)
    Kürpick, U
    Rahman, TS
    SURFACE SCIENCE, 1999, 427-28 : 15 - 21
  • [24] Role of vibrational entropy in surface diffusion: adatoms and vacancies on Ag(100), Cu(100), and Ni(100)
    Department of Physics, Cardwell Hall, Kansas State Univ., Manhattan, KS 66506, United States
    Surf Sci, (15-21):
  • [25] Silicon adatoms on the Si(111)5x2 Au surface
    Kirakosian, A
    Crain, JN
    Lin, JL
    McChesney, JL
    Petrovykh, DY
    Himpsel, FJ
    Bennewitz, R
    SURFACE SCIENCE, 2003, 532 : 928 - 933
  • [26] Self-diffusion of adatoms, dimers, and vacancies on Cu(100)
    Boisvert, G
    Lewis, LJ
    PHYSICAL REVIEW B, 1997, 56 (12): : 7643 - 7655
  • [27] Attraction-repulsion transition in the interaction of adatoms and vacancies in graphene
    LeBohec, S.
    Talbot, J.
    Mishchenko, E. G.
    PHYSICAL REVIEW B, 2014, 89 (04):
  • [28] METAL ADATOMS ON OXIDIZED SILICON SURFACES
    MCGRATH, R
    MCGILP, JF
    MCGOVERN, IT
    MORGAN, SJ
    HERRENDENHARKER, WG
    WILLIAMS, RH
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (09) : 937 - 942
  • [29] Molecular dynamics study of the diffusion barriers for silicon and carbon adatoms on a Si(111) surface
    V. S. Kharlamov
    M. N. Lubov
    E. E. Zhurkin
    Yu. V. Trushin
    Technical Physics Letters, 2006, 32 : 687 - 690
  • [30] Molecular dynamics study of the diffusion barriers for silicon and carbon adatoms on a Si(111) surface
    Kharlamov, V. S.
    Lubov, M. N.
    Zhurkin, E. E.
    Trushin, Yu. V.
    TECHNICAL PHYSICS LETTERS, 2006, 32 (08) : 687 - 690
12345