Vacancies and adatoms complexes on silicon surface

被引：0
|
作者：
Guo, HS
Souda, R
机构：
[1] Beijing Polytech Univ, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
[2] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 305, Japan
来源：
APPLIED SURFACE SCIENCE | 2001年 / 172卷 / 3-4期
关键词：
scanning tunneling microscopy; silicon surface; Ni-induced reconstruction;
D O I：
10.1016/S0169-4332(00)00872-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
By intentional introduction of Ni on Si(1 0 0) and Si(1 1 1) we have observed the reconstruction of the both surfaces. Scanning tunneling microscopy studies reveal morphologies of the Si(1 0 0)-2 x n structure, which are partially different from those of the reported up to now. Heterogeneous reconstruction has been also observed on Sill 1 I) surface: the 7 x 7 terraces and terraces being composed of disordered adatoms distribute alternatively on the surface. We present the results and give our primary exploration to their formation mechanism. (C) 2001 Elsevier Science B.V. Ali rights reserved.
引用
收藏
页码：351 / 355
页数：5
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