Electrical Properties of Highly Conducting SnO2:Sb Nanocrystals Synthesized using a Nonaqueous Sol-Gel Method

被引：23

作者：

Conti, Tiago G. ^{[1
]}

Chiquito, Adenilson J. ^{[2
]}

da Silva, Rafael O. ^{[1
]}

Longo, Elson ^{[1
]}

Leite, Edson R. ^{[1
]}

机构：

[1] Univ Fed Sao Carlos, Dept Chem, LIEC, BR-13565905 Sao Paulo, Brazil

[2] Univ Fed Sao Carlos, Dept Phys, NanoLab, BR-13565905 Sao Paulo, Brazil

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2010年 / 93卷 / 11期

基金：

巴西圣保罗研究基金会;

关键词：

DOPED TIN OXIDE; THIN-FILMS; OPTICAL-PROPERTIES; ORIENTED ATTACHMENT; CRYSTAL-GROWTH; TRANSPARENT; NANOPARTICLES; SB; FLUORINE; INSIGHTS;

D O I：

10.1111/j.1551-2916.2010.03979.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work describes the synthesis of highly conducting antimony-doped tin oxide (ATO) nanocrystals prepared via a nonaqueous sol-gel route in the size range of 4-6 nm and provides insights into its electrical properties. The antimony composition was varied from 1 to 18 mol% and the lowest resistivity (4.0 x 10(-4) Omega . cm) was observed at room temperature in the SnO2:8.8 mol% Sb composition. The samples were evaluated by X-ray diffraction, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and scanning electron microscope, and resistivity measurements were taken in the four-probe mode in the temperature range of 13-300 K. The results show highly crystalline nanoparticles in a monodisperse colloidal system, dependence on the shape of ATO nanoparticles as a function of Sb distribution, low resistivity, and semiconductor-metal transition.

引用

页码：3862 / 3866

页数：5

共 35 条

[1] Structural, electrical and optical studies on chemically deposited tin oxide films from inorganic precursors [J].

Amma, DSD ;

Vaidyan, VK ;

Manoj, PK .

MATERIALS CHEMISTRY AND PHYSICS, 2005, 93 (01) :194-201

[2] Non-aqueous synthesis of tin oxide nanocrystals and their assembly into ordered porous mesostructures [J].

Ba, JH ;

Polleux, J ;

Antonietti, M ;

Niederberger, M .

ADVANCED MATERIALS, 2005, 17 (20) :2509-+

[3] The surface and materials science of tin oxide [J].

Batzill, M ;

Diebold, U .

PROGRESS IN SURFACE SCIENCE, 2005, 79 (2-4) :47-154

[4] Antimony-Doped Tin Oxide Nanocrystals: Synthesis and Solubility Behavior in Organic Solvents [J].

da Silva, Rafael O. ;

Conti, Tiago G. ;

de Moura, Andre F. ;

Stroppa, Daniel G. ;

Freitas, Luiz C. G. ;

Ribeiro, Caue ;

Camargo, Emerson R. ;

Longo, Elson ;

Leite, Edson R. .

CHEMPHYSCHEM, 2009, 10 (05) :841-846

[5] A study on low cost-high conducting fluorine and antimony-doped tin oxide thin films [J].

Elangovan, E ;

Ramamurthi, K .

APPLIED SURFACE SCIENCE, 2005, 249 (1-4) :183-196

[6] Transparent conducting films of indium tin oxide with 3D mesopore architecture [J].

Fattakhova-Rohfing, Dina ;

Brezesinski, Torsten ;

Rathousky, Jiri ;

Feldhoff, Armin ;

Oekermann, Torsten ;

Wark, Michael ;

Smarsly, Bernd .

ADVANCED MATERIALS, 2006, 18 (22) :2980-+

[7] Transport and sensors properties of nanostructured antimony-doped tin oxide films [J].

Giraldi, T. R. ;

Escote, M. T. ;

Maciel, A. P. ;

Longo, E. ;

Leite, E. R. ;

Varela, J. A. .

THIN SOLID FILMS, 2006, 515 (04) :2678-2685

[8] ELECTRICAL BEHAVIOR OF POWDERED TIN-ANTIMONY MIXED-OXIDE CATALYSTS [J].

HERRMANN, JMJ ;

PORTEFAIX, JL ;

FORISSIER, M ;

FIGUERAS, F ;

PICHAT, P .

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1979, 75 :1346-1355

[9] Recent progress in transparent oxide semiconductors: Materials and device application [J].

Hosono, Hideo .

THIN SOLID FILMS, 2007, 515 (15) :6000-6014

[10]

JAMES K, 1976, J ELECTROCHEM SOC SO, V123, P270

← 1 2 3 4 →