共 50 条
- [41] Resonant cavity LED with InAs/GaAs active region ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS, 2000, : 139 - 142
- [45] ELECTRON EFFECTIVE MASSES OF INAS AND GAAS AS A FUNCTION OF TEMPERATURE AND DOPING PHYSICAL REVIEW, 1961, 121 (03): : 752 - &
- [46] Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system Semiconductors, 2003, 37 : 855 - 860
- [47] The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 2759 - 2762
- [50] EFFECT OF BARRIER THICKNESS ON STRAIN BALANCED InAs/GaAs QD SOLAR CELLS 2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 1214 - +