Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers

被引：21
|
作者：
Novikov, II [1 ]
Gordeev, NY
Karachinskii, LY
Maksimov, MV
Shernyakov, YM
Kovsh, AR
Krestnikov, IL
Kozhukhov, AV
Mikhrin, SS
Ledentsov, NN
机构：
[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] NL Nanosemicond GmbH, D-44227 Dortmund, Germany
来源：
SEMICONDUCTORS | 2005年 / 39卷 / 04期
关键词：
D O I：
10.1134/1.1900266
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A detailed study of the effect of p-doping of the active region on characteristics of long-wavelength InAs/GaAs QD lasers is performed. As the doping level increases, the characteristic temperature rises and the range of temperature stability for the threshold current density is broadened. In a laser doped with 2 x 10(12) cm(-2) acceptors per QD sheet, the characteristic temperature of 1200 K is obtained in the temperature range 15-75 degrees C and the differential quantum efficiency is stable in the range 15-65 degrees C. A maximum CW output power of 4.4 W is reached in an optimized structure. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：477 / 480
页数：4
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