Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers

被引：21

作者：

Novikov, II ^{[1
]}

Gordeev, NY

Karachinskii, LY

Maksimov, MV

Shernyakov, YM

Kovsh, AR

Krestnikov, IL

Kozhukhov, AV

Mikhrin, SS

Ledentsov, NN

机构：

[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] NL Nanosemicond GmbH, D-44227 Dortmund, Germany

来源：

SEMICONDUCTORS | 2005年 / 39卷 / 04期

关键词：

D O I：

10.1134/1.1900266

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A detailed study of the effect of p-doping of the active region on characteristics of long-wavelength InAs/GaAs QD lasers is performed. As the doping level increases, the characteristic temperature rises and the range of temperature stability for the threshold current density is broadened. In a laser doped with 2 x 10(12) cm(-2) acceptors per QD sheet, the characteristic temperature of 1200 K is obtained in the temperature range 15-75 degrees C and the differential quantum efficiency is stable in the range 15-65 degrees C. A maximum CW output power of 4.4 W is reached in an optimized structure. (c) 2005 Pleiades Publishing, Inc.

引用

页码：477 / 480

页数：4

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