Origin of high field-effect mobility in solvent-vapor annealed anthradithiophene derivative

被引：8

作者：

Wang, Chia-Hsin ^{[1
]}

Cheng, Yung-Chiuan ^{[2
]}

Su, Jing-Wen ^{[2
]}

Fan, Liang-Jen ^{[1
]}

Huang, Peng-Yi ^{[3
]}

Chen, Ming-Chou ^{[3
]}

Yang, Yaw-Wen ^{[1
,2
]}

机构：

[1] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

[2] Natl Tsing Hua Univ, Dept Chem, Hsinchu 30013, Taiwan

[3] Natl Cent Univ, Dept Chem, Jhongli 32001, Taiwan

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 12期

关键词：

Functionalized anthradithiophene; Solvent-vapor annealing; Organic field effect transistor; FUNCTIONALIZED ACENES; EFFECT TRANSISTORS; CHARGE-TRANSPORT; PERFORMANCE; ORIENTATION; MONOLAYERS;

D O I：

10.1016/j.orgel.2010.09.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Solvent-vapor annealing was used to increase the field-effect mobility of soluble triethylsilylethynyl anthradithiophene spin-coated on organosilane-terminated silicon dioxide, yielding a high value of 1.2 cm(2) V (1) s (1). The cause of improvement was investigated by atomic force microscopy, X-ray diffraction, and near-edge X-ray absorption fine structure spectroscopy. Vapor annealing exerts little effect on the molecular tilt and the crystallinity normal to the surface, but improves the film morphology significantly, yielding larger grains with perhaps better in-plane crystallinity. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：1947 / 1953

页数：7

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