Hybrid Floating Gate Memory with a Large Memory Window Based on the Sandwich Structure

Hybrid floating gate memories (HFGMs) based on organic field-effect transistors have been extensively investigated owing to their remarkable charge trapping performance, good compatibility with integrated circuit, and simple solution preparation process. Here, a high-performance HFGM with a large memory window is demonstrated by sandwiching a [6,6]-phenyl-C-61-butyric acid methyl ester@polystyrene hybrid floating gate between two layers of pentacene. A series of programming operations with different voltages and time prove the enhanced effect of the sandwich structure on the memory window. The memory window is enlarged by up to 347% under different programming operations. Compared to the memory device without the sandwich structure, the new memory device also presents admirable endurance and retention characteristics in 600 continuous erasing-reading-programing-reading cycling and data retention tests. Thus, the HFGM with the sandwich structure provides a feasible path to develop high-performance memory devices with a large memory window, which is beneficial for practical application and popularization.