Investigation of 3C-SiC epitaxial layers grown by sublimation epitaxy

被引：18
作者：
Davydov, DV
Lebedev, AA
Tregubova, AS
Kozlovski, VV
Kuznetsov, AN
Bogdanova, EV
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, RU-194021 St Petersburg, Russia
[2] St Petersburg State Tech Univ, RU-194251 St Petersburg, Russia
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
carbon vacancy; deep centers; DLTS; proton irradiation; sublimation heteropolytype epitaxy; X-ray topography;
D O I：
10.4028/www.scientific.net/MSF.338-342.221
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The objective of the present work was to prepare 3C-SiC epilayers on base of 6H-SiC substrate and to study epilayer's parameters. Heteroepitaxy was carried out using sublimation epitaxy (SE) in an open system. The presence of 3C-SiC layer in the prepared structures was confirmed by X-ray diffraction. Parameters of Schottky diodes prepared on base of this epilayers were investigated by capacitance-voltage characteristics and DLTS. Also it was investigated influence of proton irradiation and annealing on epilayers Nd-Na value and deep centres concentration.
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页码：221 / 224
页数：4
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