Development and characterization of GaInAsSb and InAsSbP mid-infrared photodetectors

被引：0
|
作者：
Mauk, M [1 ]
Shellenbarger, Z [1 ]
Cox, J [1 ]
Sims, P [1 ]
Lesko, J [1 ]
Barnett, AM [1 ]
机构：
[1] Astropower Inc, Newark, DE 19716 USA
来源：
ICM'99: ELEVENTH INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS | 1999年
关键词：
GaInAsSb; InAsSbP; mid-infrared; detector; room-temperature;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：31 / 34
页数：4
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