Physical Modelling of 4H-SiC PiN Diodes

被引：1
|
作者：
Fisher, C. A. [1 ]
Jennings, M. R. [1 ]
Bryant, A. T. [1 ]
Perez-Tomas, A. [2 ]
Gammon, P. M. [1 ]
Brosselard, P. [2 ]
Godignon, P. [2 ]
Mawby, P. A. [1 ]
机构：
[1] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England
[2] CNM CSIC, Ctr Nacl Microelect, Bellaterra 08193, Spain
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
基金：
英国工程与自然科学研究理事会;
关键词：
4H-SiC; PiN diode; electro-thermal modeling; CARRIER LIFETIME;
D O I：
10.4028/www.scientific.net/MSF.717-720.993
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A physical electro-thermal model of the 4H-SiC PiN diode has been developed, and compared with both finite-element simulations and experimental results. Good matching for both inductive switching and conduction characteristics has been observed for a range of operating temperatures, discussions and results are presented.
引用
收藏
页码：993 / +
页数：2
相关论文
共 50 条
  • [41] 1.2 kV rectifiers thermal behaviour:: comparison between Si PiN, 4H-SiC Schottky and JBS diodes
    Brosselard, P.
    Jorda, X.
    Vellvehi, A.
    Perez-Tomas, A.
    Godignon, P.
    Millan, J.
    2007 EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-10, 2007, : 696 - 704
  • [42] Design, fabrication and characterization of mesa combined with JTE termination for high-voltage 4H-SiC PiN diodes
    Deng, Xiaochuan
    Xiao, Han
    Wu, Jia
    Shen, Huajun
    Li, Chengzhan
    Tang, Yachao
    Zhang, Yourun
    Zhang, Bo
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 88 : 167 - 173
  • [43] Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures
    Niwa, Hiroki
    Feng, Gan
    Suda, Jun
    Kimoto, Tsunenobu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (10) : 2748 - 2752
  • [44] Electrical characteristics and reliability of 4H-SiC pin diodes fabricated on in-house grown and commercial epitaxial films
    Losee, PA
    Li, C
    Seiler, J
    Stahlbush, RE
    Chow, TP
    Bhat, IB
    Gutmann, RJ
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 961 - 964
  • [45] Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation
    Nakayama, Koji
    Tanaka, Atsushi
    Nishimura, Masahiko
    Asano, Katsunori
    Miyazawa, Tetsuya
    Ito, Masahiko
    Tsuchida, Hidekazu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) : 895 - 901
  • [46] Progress on the development of 10 kV 4H-SiC PiN diodes for high Current/High voltage power handling applications
    Hull, Brett A.
    Sumakeri, Joseph J.
    Das, Mrinal K.
    Richmond, James T.
    Palmour, John
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 895 - +
  • [47] 16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
    Cheng, Lin
    Agarwal, Anant K.
    O'Loughlin, Michael
    Capell, Craig
    Lam, Khiem
    Jonas, Charlotte
    Richmond, Jim
    Burk, Al
    Palmour, John W.
    Ogunniyi, Aderinto A.
    O'Brien, Heather K.
    Scozzie, Charles J.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 895 - +
  • [48] Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
    Vang, H.
    Scharnhoz, S.
    Raynaud, C.
    Lazar, M.
    Paques, G.
    Planson, D.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1011 - +
  • [49] Breakdown Characteristics of 12-20 kV-class 4H-SiC PiN Diodes with Improved Junction Termination Structures
    Niwa, Hiroki
    Feng, Gan
    Suda, Jun
    Kimoto, Tsunenobu
    2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2012, : 381 - 384
  • [50] Correlation between Reverse Characteristics and Structural Defects in 4H-SiC PiN Diode
    Yun, Seung Bok
    Bahng, Wook
    Kang, In-Ho
    Shin, Yun Ji
    Han, Sang Bo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 63 (09) : 1819 - 1823
12345