Physical Modelling of 4H-SiC PiN Diodes

被引：1
|
作者：
Fisher, C. A. [1 ]
Jennings, M. R. [1 ]
Bryant, A. T. [1 ]
Perez-Tomas, A. [2 ]
Gammon, P. M. [1 ]
Brosselard, P. [2 ]
Godignon, P. [2 ]
Mawby, P. A. [1 ]
机构：
[1] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England
[2] CNM CSIC, Ctr Nacl Microelect, Bellaterra 08193, Spain
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
基金：
英国工程与自然科学研究理事会;
关键词：
4H-SiC; PiN diode; electro-thermal modeling; CARRIER LIFETIME;
D O I：
10.4028/www.scientific.net/MSF.717-720.993
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A physical electro-thermal model of the 4H-SiC PiN diode has been developed, and compared with both finite-element simulations and experimental results. Good matching for both inductive switching and conduction characteristics has been observed for a range of operating temperatures, discussions and results are presented.
引用
收藏
页码：993 / +
页数：2
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