The Rashba and quantum size effects in ultrathin Bi films

被引：17

作者：

Hirahara, Toru ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2015年 / 201卷

基金：

日本学术振兴会;

关键词：

Rashba effect; Bismuth ultrathin films; Spin-splitting; SYSTEMS; BISMUTH;

D O I：

10.1016/j.elspec.2014.08.004

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Precise characterization of physical properties in nanometer-scale materials is interesting not only in terms of low-dimensional physics but also in application to devices. Due to the reduced dimensionality and symmetry, these systems possess various interesting properties that cannot be found in the bulk. In this article, focusing on epitaxial ultrathin bismuth films formed on a silicon substrate, we introduce an intriguing interplay of the quantum size and Rashba effects in reciprocal space. Utilizing spin- and angle-resolved photoemission spectroscopy, we observed clear Rashba-split nature of the surface-state bands in these Bi films. However, the band dispersion did not follow the simple Rashba picture and the spin-splitting was lost where they overlapped with the bulk projection. From first-principles calculations, this is explained as a change in the nature of the band-splitting into an even-odd splitting induced by the quantum size effect. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：98 / 104

页数：7

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