Investigation of Se supply for the growth of Cu2ZnSn(SxSe1-x)4 (x ≈ 0.02-0.05) thin films for photovoltaics

被引：20

作者：

Ge, Jie ^{[2
]}

Zuo, Shaohua ^{[1
]}

Jiang, Jinchun ^{[1
]}

Ma, Jianhua ^{[1
]}

Yang, Lihong ^{[1
]}

Yang, Pingxiong ^{[2
]}

Chu, Junhao ^{[1
,2
]}

机构：

[1] Shanghai Ctr Photovolta, Shanghai 201201, Peoples R China

[2] E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 20期

基金：

中国国家自然科学基金;

关键词：

Cu2ZnSn(SxSe1-x)(4); Solar cell absorber; Electroplating; ITO substrate; Selenization; Se supply; SOLAR-CELLS; EFFICIENCY; PRECURSORS;

D O I：

10.1016/j.apsusc.2012.04.080

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, the selenization growth of electrochemically deposited Cu2ZnSn(SxSe1-x)(4) (CZTSSe) films with x approximate to 0.02-0.05 was optimized by two groups of experiments in a graphite box. The selenization of CZTSSe is strongly dependent on the Se supply in the graphite box. Insufficient Se supply left the selenization incomplete. Higher Se supply to CZTSSe either by increasing the Se powder usage or by increasing the external pressure of nitrogen resulted in the degradation of CZTSSe films with lower degree of crystallinity. Our experimental results show that the refined usage amount of Se powder is 0.3 g and the optimized external pressure of flowing nitrogen in the furnace is from 0.5 Torr to 2 Torr. The characterization of XRD, Raman and SEM confirmed the films obtained under the best conditions were well-developed CZTSSe films with compact faceted grains and good crystallinity. Additionally, the CZTSSe film grown using 2 Torr of nitrogen pressure showed more orientation along (220/204). (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：7844 / 7848

页数：5

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