Determination of a base-layer for drift transistors with a base punch-through voltage

被引：0
|
作者：
Maronchuk, IE [1 ]
Frolov, AN [1 ]
Shutov, SV [1 ]
机构：
[1] Kherson State Tech Univ, Kherson, Ukraine
来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA | 2001年 / 44卷 / 11-12期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：66 / 70
页数：5
相关论文
共 50 条
  • [1] BASE-LAYER DESIGN FOR HIGH-FREQUENCY TRANSISTORS
    VELORIC, HS
    FUSELIER, C
    RAUSCHER, D
    RCA REVIEW, 1962, 23 (01): : 112 - 125
  • [2] BASE-LAYER DESIGN FOR HIGH-FREQUENCY TRANSISTORS
    VELORIC, HS
    RAUSCHER, D
    FUSELIER, CR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (12) : C269 - C269
  • [3] Base thickness determination from the punch-through voltage for vertical n-p-n transistors incorporated into I2L elements
    Shutov, SV
    Frolov, AN
    Litvinenko, VN
    Frolov, AA
    TECHNICAL PHYSICS, 2004, 49 (02) : 269 - 271
  • [4] Base thickness determination from the punch-through voltage for vertical n-p-n transistors incorporated into I2L elements
    S. V. Shutov
    A. N. Frolov
    V. N. Litvinenko
    A. A. Frolov
    Technical Physics, 2004, 49 : 269 - 271
  • [5] PUNCH-THROUGH PHENOMENON IN MOS TRANSISTORS.
    Owczarek, Artur K.
    Electron Technology (Warsaw), 1980, 13 (1-2): : 55 - 65
  • [6] TEMPERATURE DEPENDENCE OF PUNCH-THROUGH VOLTAGE
    STUPELMA.VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 141 - &
  • [7] The influence of punch-through in lowly doped collector on base for npn SiGe base HBTs with high fT
    Kong, DY
    Li, Y
    Wei, TL
    Nie, WD
    Qian, WS
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 784 - 787
  • [8] Influence of punch-through in lowly doped collector on base for npn SiGe base HBTs with high fT
    Kong, Deyi
    Li, Yao
    Wei, Tongli
    Nie, Weidong
    Qian, Wensheng
    International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 784 - 787
  • [9] Modellization of the breakdown voltage of four-layer punch-through TVS diodes
    Urresti, J
    Hidalgo, S
    Flores, D
    Roig, J
    Vellvehi, M
    Rebollo, J
    2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, 2004, : 159 - 162
  • [10] Punch-through effects in RF bulk LDMOS transistors
    Cortes, I.
    Fernandez-Martinez, P.
    Flores, D.
    Hidalgo, S.
    Rebollo, J.
    2007 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS, 2007, : 344 - +
12345