Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

被引：368

作者：

Miao, Feng ^{[1
]}

Strachan, John Paul ^{[1
]}

Yang, J. Joshua ^{[1
]}

Zhang, Min-Xian ^{[1
]}

Goldfarb, Ilan ^{[1
]}

Torrezan, Antonio C. ^{[1
]}

Eschbach, Peter ^{[2
]}

Kelley, Ronald D. ^{[2
]}

Medeiros-Ribeiro, Gilberto ^{[1
]}

Williams, R. Stanley ^{[1
]}

机构：

[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA

[2] Hewlett Packard Corp, Corvallis, OR 97330 USA

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 47期

关键词：

memory; resistive random access memory (RRAM); switches; oxides; RESISTIVE SWITCHES; NONVOLATILE MEMORY; ROOM-TEMPERATURE; RESISTANCE; TRANSFORMATION; TRANSPORT; UNIPOLAR; ELEMENTS; DEVICE; OXYGEN;

D O I：

10.1002/adma.201103379

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

引用

页码：5633 / +

页数：9

共 68 条

[1]

[Anonymous], WORKSH ERD ERM WORK

[2] 'Memristive' switches enable 'stateful' logic operations via material implication [J].