Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

被引：365
作者：
Miao, Feng [1 ]
Strachan, John Paul [1 ]
Yang, J. Joshua [1 ]
Zhang, Min-Xian [1 ]
Goldfarb, Ilan [1 ]
Torrezan, Antonio C. [1 ]
Eschbach, Peter [2 ]
Kelley, Ronald D. [2 ]
Medeiros-Ribeiro, Gilberto [1 ]
Williams, R. Stanley [1 ]
机构：
[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[2] Hewlett Packard Corp, Corvallis, OR 97330 USA
来源：
ADVANCED MATERIALS | 2011年 / 23卷 / 47期
关键词：
memory; resistive random access memory (RRAM); switches; oxides; RESISTIVE SWITCHES; NONVOLATILE MEMORY; ROOM-TEMPERATURE; RESISTANCE; TRANSFORMATION; TRANSPORT; UNIPOLAR; ELEMENTS; DEVICE; OXYGEN;
D O I：
10.1002/adma.201103379
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
引用
收藏
页码：5633 / +
页数：9
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