Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser

被引:21
作者
Wilcox, K. G. [1 ]
Quarterman, A. H. [1 ]
Beere, H. E. [2 ]
Ritchie, D. A. [2 ]
Tropper, A. C. [1 ]
机构
[1] Univ Southampton, Sch Phys & Astron, Southampton SO17 1BJ, Hants, England
[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
基金
英国工程与自然科学研究理事会;
关键词
optical tuning; semiconductor lasers; surface emitting lasers; TIMING JITTER; HIGH-POWER; SPECTROMETER; TRAIN;
D O I
10.1063/1.3644162
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a femtosecond-pulse vertical-external-cavity surface-emitting laser with a continuous repetition frequency tuning range of 8% near 1 GHz. A constant average output power of 56 +/- 1 mW and near-transform-limited pulse duration of 450 +/- 20 fs were observed across the entire tuning range. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644162]
引用
收藏
页数:3
相关论文
共 14 条
[1]   Molecular fingerprinting with the resolved modes of a femtosecond laser frequency comb [J].
Diddams, Scott A. ;
Hollberg, Leo ;
Mbele, Vela .
NATURE, 2007, 445 (7128) :627-630
[2]   High-power, high repetition rate picosecond and femtosecond sources based on Yb-doped fiber amplification of VECSELs [J].
Dupriez, P. ;
Finot, C. ;
Malinowski, A. ;
Sahu, J. K. ;
Nilsson, J. ;
Richardson, D. J. ;
Wilcox, K. G. ;
Foreman, H. D. ;
Tropper, A. C. .
OPTICS EXPRESS, 2006, 14 (21) :9611-9616
[3]   Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power [J].
Garnache, A ;
Hoogland, S ;
Tropper, AC ;
Sagnes, I ;
Saint-Girons, G ;
Roberts, JS .
APPLIED PHYSICS LETTERS, 2002, 80 (21) :3892-3894
[4]   Femtosecond high-power quantum dot vertical external cavity surface emitting laser [J].
Hoffmann, Martin ;
Sieber, Oliver D. ;
Wittwer, Valentin J. ;
Krestnikov, Igor L. ;
Livshits, Daniil A. ;
Barbarin, Yohan ;
Suedmeyer, Thomas ;
Keller, Ursula .
OPTICS EXPRESS, 2011, 19 (09) :8108-8116
[5]   10-GHz train of sub-500-fs optical soliton-like pulses from a surface-emitting semiconductor laser [J].
Hoogland, S ;
Garnache, A ;
Sagnes, I ;
Roberts, JS ;
Tropper, AC .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (02) :267-269
[6]   Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser [J].
Klopp, P. ;
Griebner, U. ;
Zorn, M. ;
Weyers, M. .
APPLIED PHYSICS LETTERS, 2011, 98 (07)
[7]   All-semiconductor room-temperature terahertz time domain spectrometer [J].
Mihoubi, Zakaria ;
Wilcox, Keith G. ;
Elsmere, Stephen ;
Quarterman, Adrian ;
Rungsawang, Rakchanok ;
Farrer, Ian ;
Beere, Harvey E. ;
Ritchie, David A. ;
Tropper, Anne ;
Apostolopoulos, Vasileios .
OPTICS LETTERS, 2008, 33 (18) :2125-2127
[8]   Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL [J].
Quarterman, A. H. ;
Wilcox, K. G. ;
Elsmere, S. P. ;
Mihoubi, Z. ;
Tropper, A. C. .
ELECTRONICS LETTERS, 2008, 44 (19) :1135-1136
[9]   A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses [J].
Quarterman, Adrian H. ;
Wilcox, Keith G. ;
Apostolopoulos, Vasilis ;
Mihoubi, Zakaria ;
Elsmere, Stephen P. ;
Farrer, Ian ;
Ritchie, David A. ;
Tropper, Anne .
NATURE PHOTONICS, 2009, 3 (12) :729-731
[10]   Coherent control of ultrahigh-frequency acoustic resonances in photonic crystal fibers [J].
Wiederhecker, G. S. ;
Brenn, A. ;
Fragnito, H. L. ;
Russell, P. St. J. .
PHYSICAL REVIEW LETTERS, 2008, 100 (20)