Infrared studies of the oxygen precipitation in fast neutron irradiated CZ-Si

被引：2
作者：
Ma, QY [1 ]
Li, YX [1 ]
Yang, S [1 ]
Liu, HY [1 ]
Hao, QY [1 ]
机构：
[1] Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 122卷 / 03期
基金：
中国国家自然科学基金;
关键词：
oxygen precipitates; neutron irradiation; CZ-Si; FTIR; absorbance band; O-i;
D O I：
10.1016/j.mseb.2005.06.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The behavior of oxygen precipitation in fast neutron irradiated CZ-Si was studied using Fourier transform infrared absorption spectrometer (FTIR). It was found that with the increase of irradiation dose the process of oxygen precipitation was accelerated. Measured at room temperature (RT), the absorption band attributed to interstitial oxygen was broadened because of the generation of oxygen precipitates. At low temperature, the broadened band split to oxygen precipitates related peaks at 1078 and 1096 cm(-1) that attributed to spherical-like oxygen precipitates and octahedral shaped oxygen precipitates, respectively. There is a peak at 1182 cm(-1), which attributed to the platelet shaped oxygen precipitates, but it is weaker than 1078 cm(-1) peak and 1096 cm(-1) peak. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码：218 / 221
页数：4
相关论文
共 14 条
  • [1] Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen
    Borghesi, A
    Sassella, A
    Geranzani, P
    Porrini, M
    Pivac, B
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3): : 145 - 148
  • [2] ENHANCED OXYGEN PRECIPITATION IN ELECTRON-IRRADIATED SILICON
    HALLBERG, T
    LINDSTROM, JL
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) : 5130 - 5138
  • [3] The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon
    Li, YX
    Guo, HY
    Liu, BD
    Liu, TJ
    Hao, QY
    Liu, CC
    Yang, DR
    Que, DL
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 253 (1-4) : 6 - 9
  • [4] The intrinsic gettering in neutron irradiation czochralski-silicon
    Li, YX
    Liu, HY
    Niu, PJ
    Lu, CC
    Xu, YS
    Yang, DR
    Que, DL
    [J]. ACTA PHYSICA SINICA, 2002, 51 (10) : 2407 - 2410
  • [5] Interaction between self-interstitials and the oxygen dimer in silicon
    Lindström, JL
    Hallberg, T
    Hermansson, J
    Murin, LI
    Komarov, BA
    Markevich, VP
    Kleverman, M
    Svensson, BG
    [J]. PHYSICA B-CONDENSED MATTER, 2001, 308 : 284 - 289
  • [6] MA QY, 2003, P 13 SEM SIL INT CIR, P399
  • [7] MENG XT, 2000, J SYNTH CRYST, V29, P247
  • [8] First stage of oxygen aggregation in silicon: The oxygen dimer
    Oberg, S
    Ewels, CP
    Jones, R
    Hallberg, T
    Lindstrom, JL
    Murin, LI
    Briddon, PR
    [J]. PHYSICAL REVIEW LETTERS, 1998, 81 (14) : 2930 - 2933
  • [9] Pei Zh.J., 2000, SEMICOND TECHNOL, V25, P39
  • [10] Optical absorption of precipitated oxygen in silicon at liquid helium temperature
    Sassella, A
    Borghesi, A
    Borionetti, G
    Geranzani, P
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3): : 224 - 229
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