Epitaxial La0.7Sr0.3MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular-beam epitaxy

被引：22
作者：
Mechin, L. [1 ]
Adamo, C. [2 ]
Wu, S. [1 ]
Guillet, B. [1 ]
Lebargy, S. [1 ]
Fur, C. [1 ]
Routoure, J. -M. [1 ]
Mercone, S. [3 ]
Belmeguenai, M. [3 ]
Schlom, D. G. [2 ,4 ]
机构：
[1] Univ Caen Basse Normandie, ENSICAEN, CNRS, GREYC,UMR 6072, F-14050 Caen, France
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[3] Univ Paris 13, CNRS, LSPM, UPR 3407, F-93430 Villetaneuse, France
[4] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 06期
关键词：
epitaxy; low-frequency noise; oxides; COLOSSAL MAGNETORESISTANCE; INTERFACE STRUCTURE; 1/F NOISE; SI; OXIDES; SI(001);
D O I：
10.1002/pssa.201127712
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
La0.7Sr0.3MnO3 (LSMO) thin films (with a thickness of 10, 20, 60, 75, and 100?nm) were grown on SrTiO3 (STO)-buffered silicon (001) substrates by reactive molecular-beam epitaxy. X-ray diffraction (XRD) revealed the heterostructures to be fully epitaxial with orientation relationship (001) LSMO || (001) STO || (001) Si and [100] LSMO || [100] STO || [110] Si. Root mean square roughness was about 0.5?nm as measured by atomic force microscopy (AFM) for films of 1075?nm thicknesses, and about 1?nm for the 100?nm thick LSMO film. Normalized Hooge parameters in the (0.95 +/- 0.25) x 10(-30)(3.41 +/- 0.71) x 10(-30)?m3 range were measured at 300?K, which are comparable to the noise level typically measured in the best LSMO films on (001) STO substrates. Overall these very low noise LSMO films with thicknesses in the 10100?nm range grown on STO/Si showed properties rivaling those of LSMO films deposited on (001) STO single crystal substrates, thus demonstrating their potential use for LSMO-based devices on silicon substrates.
引用
收藏
页码：1090 / 1095
页数：6
相关论文
共 34 条
[1]   Effect of biaxial strain on the electrical and magnetic properties of (001) La0.7Sr0.3MnO3 thin films [J].
Adamo, C. ;
Ke, X. ;
Wang, H. Q. ;
Xin, H. L. ;
Heeg, T. ;
Hawley, M. E. ;
Zander, W. ;
Schubert, J. ;
Schiffer, P. ;
Muller, D. A. ;
Maritato, L. ;
Schlom, D. G. .
APPLIED PHYSICS LETTERS, 2009, 95 (11)
[2]   Temperature dependence of magnetic properties of La0.7Sr0.3MnO3/SrTiO3 thin films on silicon substrates [J].
Belmeguenai, M. ;
Mercone, S. ;
Adamo, C. ;
Mechin, L. ;
Fur, C. ;
Monod, P. ;
Moch, P. ;
Schlom, D. G. .
PHYSICAL REVIEW B, 2010, 81 (05)
[3]   Spin polarized La0.7Sr0.3MnO3 thin films on silicon [J].
Bergenti, I. ;
Dediu, V. ;
Arisi, E. ;
Cavallini, M. ;
Biscarini, F. ;
Taliani, C. ;
de Jong, M. P. ;
Dennis, C. L. ;
Gregg, J. F. ;
Solzi, M. ;
Natali, M. .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 312 (02) :453-457
[4]   ORIGIN OF FERROELECTRICITY IN PEROVSKITE OXIDES [J].
COHEN, RE .
NATURE, 1992, 358 (6382) :136-138
[5]   Physics of thin-film ferroelectric oxides [J].
Dawber, M ;
Rabe, KM ;
Scott, JF .
REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130
[6]   Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001) [J].
Delhaye, G. ;
Merckling, C. ;
El-Kazzi, M. ;
Saint-Girons, G. ;
Gendry, M. ;
Robach, Y. ;
Hollinger, G. ;
Largeau, L. ;
Patriarche, G. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)
[7]   Interface structure and thermal stability of epitaxial SrTiO3 thin films on Si(001) [J].
Goncharova, L. V. ;
Starodub, D. G. ;
Garfunkel, E. ;
Gustafsson, T. ;
Vaithyanathan, V. ;
Lettieri, J. ;
Schlom, D. G. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (01)
[8]   Interface structure and phase of epitaxial SrTiO3 (110) thin films grown directly on silicon -: art. no. 131908 [J].
Hao, JH ;
Gao, J ;
Wang, Z ;
Yu, DP .
APPLIED PHYSICS LETTERS, 2005, 87 (13) :1-3
[9]   SOLID-STATE MAGNETIC-FIELD SENSORS AND APPLICATIONS [J].
HEREMANS, J .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (08) :1149-1168
[10]   1/F NOISE IS NO SURFACE EFFECT [J].
HOOGE, FN .
PHYSICS LETTERS A, 1969, A 29 (03) :139-&
1234