Nano epitaxial growth of GaAs on Si (001)

被引：15

作者：

Hsu, Chao-Wei ^{[1
]}

Chen, Yung-Feng

Su, Yan-Kuin

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 13期

关键词：

chemical vapour deposition; dislocation density; gallium compounds; III-V semiconductors; nanofabrication; semiconductor growth; silicon; substrates; COMPOUND SEMICONDUCTORS; GALLIUM-ARSENIDE; DEFECT REDUCTION; SILICON;

D O I：

10.1063/1.3640226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nano epitaxial growth (NEG) is used to develop GaAs monolithic hetero-epitaxy onto Si (001). For the GaAs grown in a nanopatterned trench with an aspect ratio of 5, the dislocations originally generated at the GaAs/Si interface are mostly isolated by the SiO2 sidewall. Compared with the conventional-planar Si substrate, implementing the NEG technique is able to decrease the dislocation density from about 10(9) cm(-2) to almost zero. It is also confirmed that NEG is capable of confining the dislocations within the GaAs initial epitaxial layer (<100 nm), which meets the requirement of relatively less complicated epitaxial processes. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3640226]

引用

页数：3

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