共 10 条
[4]
EFFECT OF EMPLOYING POSITIONS OF THERMAL CYCLIC ANNEALING AND STRAINED-LAYER SUPERLATTICE ON DEFECT REDUCTION IN GAAS-ON-SI
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1990, 29 (11)
:2371-2375
[5]
MISFIT AND THREADING DISLOCATIONS IN GAAS-LAYERS GROWN ON SI SUBSTRATES BY MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1987, 26 (03)
:L163-L165
[7]
High quality Ge on Si by epitaxial necking
[J].
APPLIED PHYSICS LETTERS,
2000, 76 (25)
:3700-3702