A MIXED BIAS-MODE POWER AMPLIFIER FOR WCDMA APPLICATIONS

被引：2

作者：

Lee, Dong-Ho ^{[1
]}

An, Kyu Hwan ^{[2
]}

Lee, Ockgoo ^{[3
]}

Kim, Hyungwook ^{[4
]}

Lee, Chang-Ho ^{[5
]}

Laskar, Joy ^{[4
]}

机构：

[1] Hanbat Natl Univ, Taejon, South Korea

[2] Skyworks Solut Inc, Irvine, CA USA

[3] Qualcomm, San Diego, CA USA

[4] Georgia Inst Technol, Atlanta, GA 30332 USA

[5] Samsung Electromech, Atlanta, GA USA

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2011年 / 53卷 / 11期

关键词：

adaptive bias; CMOS power amplifiers; efficiency enhancement; power amplifier; WCDMA; INTERMODULATION; ASYMMETRY;

D O I：

10.1002/mop.26367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wideband code-division multiple access (WCDMA) CMOS power amplifier with a mixed bias-mode scheme has been developed to meet high linearity and low-quiescent current requirements at the same time. The power stage of the two-stage power amplifier consists in three identical differential pairs that are selectively biased with a fixed bias mode or an adaptive bias mode. Each output power of three differential pairs is combined with an on-chip transformer to achieve output power requirement. The developed power amplifier shows 25.7% of power-stage drain efficiency at 27 dBm of output power with -33 dBc ACLR at 5 MHz offset in 1.95 GHz. The quiescent current of the mixed bias-mode power stage was 81 mA, whereas, it is 212 mA with the fixed bias mode. (C) 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2547-2552,2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26367

引用

页码：2547 / 2552

页数：6

共 16 条

[1] Power-combining transformer techniques for fully-integrated CMOS power amplifiers [J].