Optimizing CdS Buffer Layer For CIGS Based Thin Film Solar Cell

被引：0

作者：

Zhang, Weijie ^{[1
]}

Demirkan, Korhan ^{[1
]}

Zapalac, Geordie ^{[1
]}

Spaulding, David ^{[1
]}

Titus, Jochen ^{[1
]}

Mackie, Neil ^{[1
]}

机构：

[1] MiaSole Hitech Corp, Santa Clara, CA 95051 USA

来源：

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2017年

关键词：

PVD CdS; CIGS; sputter; Thin film;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CdS buffer layer is one of the important factors that affect the conversion efficiency in CIGS-based solar cell. In our PVD CdS process optimization, different sputter powers in the early stage of CdS film growth were tested. Higher sputter power in the early stage of CdS growth improves cell efficiency and widens the process window. AES depth profile reveals a decrease of oxygen content at CdS/CIGS interface. Having fewer oxygen atoms at CdS/CIGS interface reduces the amount of deep acceptors in CIGS and results in improved cell efficiency.

引用

页码：820 / 822

页数：3

共 5 条

[1] Microstructural and Chemical Investigation of PVD-CdS/PVD-CuIn1-xGaxSe2 Heterojunctions: A Transmission Electron Microscopy Study [J].