Half-life of the β decay 115In(9/2+)→115Sn(3/2+)

被引：13

作者：

Andreotti, Erica ^{[1
]}

Hult, Mikael ^{[1
]}

Gonzalez de Orduna, Raquel ^{[1
]}

Marissens, Gerd ^{[1
]}

Wieslander, J. S. Elisabeth ^{[1
]}

Misiaszek, Marcin ^{[2
]}

机构：

[1] Commiss European Communities, Joint Res Ctr, Inst Reference Mat & Measurements, B-2440 Geel, Belgium

[2] Jagiellonian Univ, M Smoluchowski Inst Phys, PL-30059 Krakow, Poland

来源：

PHYSICAL REVIEW C | 2011年 / 84卷 / 04期

关键词：

ENVIRONMENTAL FINE-STRUCTURE; IN-115; LEVEL;

D O I：

10.1103/PhysRevC.84.044605

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

The half-life of the rare beta(-) decay of In-115 (9/2+) to Sn-115 (3/2+) was determined by measuring the subsequent 497.334(22) keV gamma-ray emission in a high-purity indium sample. The measurements were carried out by means of ultralow-level gamma-ray spectrometry in the HADES underground laboratory, using three different high-purity germanium detectors. The value of the partial half-life for this low-Q(beta)(-) transition was measured to be 4.3(5) x 10(20) yr.

引用

页数：8

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