Bismuth vanadate;
BiVO4;
Solar water splitting;
Electron diffusion length;
Charge collection efficiency;
Water oxidation efficiency;
Charge separation efficiency;
D O I:
10.1016/j.nanoms.2019.10.003
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
We report a photoelectrochemical investigation of BiVO4 photoanodes prepared by successive ionic layer adsorption and reaction (SILAR), a facile method that yields uniform nanoporous films. After characterization of the phase, morphology, composition, and optical properties of the prepared films, the efficiencies of charge separation (eta(sep)) and water oxidation (eta(o)(x)) in solar water splitting cells employing these photoanodes were estimated following a previously reported procedure. Unexpected wavelength and illumination direction dependencies were discovered in the derived efficiencies, casting doubt on the validity of the analysis. An alternative approach using a diffusion-reaction model that explicitly considers the efficiency of electron collection resolved the discrepancies and explained the illumination direction dependence of the photocurrent. Electron diffusion lengths (L-n) of 0.45 mu m and 0.55 mu m were derived for pristine and cobalt phosphate (Co-Pi) modified BiVO4, respectively, which are much shorter than the film thickness of similar to 2.1 mu m. The Co-Pi treatment also increased eta(ox )from 0.86 to similar to 1, which is the main reason for the overall performance enhancement caused by adding Co-Pi. These findings suggest that there is little scope for improving the performance of SILAR-deposited BiVO4 photoanodes by further catalyzing water oxidation, but enhanced performance is achievable if electron transport can be improved.
机构:
Anhui Univ Sci & Technol, Sch Earth & Environm, Huainan 232001, Anhui, Peoples R China
Univ Sci & Technol China USTC, CAS Key Lab Mat Energy Convers, Dept Mat Sci & Engn, Collaborat Innovat Ctr Chem Energy Mat iChEM, Hefei 230026, Anhui, Peoples R ChinaAnhui Univ Sci & Technol, Sch Earth & Environm, Huainan 232001, Anhui, Peoples R China
Ge, Jianhua
Ding, Xiulong
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机构:
Anhui Univ Sci & Technol, Sch Earth & Environm, Huainan 232001, Anhui, Peoples R ChinaAnhui Univ Sci & Technol, Sch Earth & Environm, Huainan 232001, Anhui, Peoples R China
Ding, Xiulong
Jiang, Daochuan
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机构:
Univ Sci & Technol China USTC, CAS Key Lab Mat Energy Convers, Dept Mat Sci & Engn, Collaborat Innovat Ctr Chem Energy Mat iChEM, Hefei 230026, Anhui, Peoples R ChinaAnhui Univ Sci & Technol, Sch Earth & Environm, Huainan 232001, Anhui, Peoples R China
Jiang, Daochuan
Zhang, Lei
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机构:
Univ Sci & Technol China USTC, CAS Key Lab Mat Energy Convers, Dept Mat Sci & Engn, Collaborat Innovat Ctr Chem Energy Mat iChEM, Hefei 230026, Anhui, Peoples R ChinaAnhui Univ Sci & Technol, Sch Earth & Environm, Huainan 232001, Anhui, Peoples R China
Zhang, Lei
Du, Pingwu
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机构:
Univ Sci & Technol China USTC, CAS Key Lab Mat Energy Convers, Dept Mat Sci & Engn, Collaborat Innovat Ctr Chem Energy Mat iChEM, Hefei 230026, Anhui, Peoples R ChinaAnhui Univ Sci & Technol, Sch Earth & Environm, Huainan 232001, Anhui, Peoples R China
机构:
Xuzhou Med Univ, Sch Med Imaging, Xuzhou 221004, Peoples R ChinaXuzhou Med Univ, Sch Med Imaging, Xuzhou 221004, Peoples R China
Sui, Meirong
Gu, Xiuquan
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机构:
China Univ Min & Technol, Sch Mat Sci & Phys, Xuzhou 221116, Jiangsu Provinc, Peoples R ChinaXuzhou Med Univ, Sch Med Imaging, Xuzhou 221004, Peoples R China
机构:
Nanyang Technol Univ, Sch Mat Sci & Engn, Nanyang Ave, Singapore 639798, Singapore
Bhabha Atom Res Ctr, Chem Div, Chem Grp, Mumbai 400085, Maharashtra, IndiaNanyang Technol Univ, Sch Mat Sci & Engn, Nanyang Ave, Singapore 639798, Singapore
Antony, Rajini P.
Chiam, Sing Yang
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机构:
ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, SingaporeNanyang Technol Univ, Sch Mat Sci & Engn, Nanyang Ave, Singapore 639798, Singapore
Chiam, Sing Yang
Abdi, Fatwa Firdaus
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机构:
Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Solar Fuels, Hahn Meitner Pl 1, D-14109 Berlin, GermanyNanyang Technol Univ, Sch Mat Sci & Engn, Nanyang Ave, Singapore 639798, Singapore