Growth and characteristics of Zn-Se-S thin layers by dip method

被引：12

作者：

Chate, P. A. ^{[1
]}

Sathe, D. J. ^{[2
]}

Hankare, P. P. ^{[3
]}

机构：

[1] JSM Coll, Dept Chem, Alibag 402201, India

[2] KITs Coll Engn, Dept Chem, Kolhapur, Maharashtra, India

[3] Shivaji Univ, Dept Chem, Solid State Res Lab, Kolhapur 416004, Maharashtra, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 39期

关键词：

Nanostructures; Semiconductors; Thin films; Chemical synthesis; CHEMICAL BATH DEPOSITION; OPTICAL-PROPERTIES; SYNTHETIC ROUTE; FILMS; TEMPERATURE; LASER;

D O I：

10.1016/j.jallcom.2011.06.101

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zn-Se-S composite thin films of mixed cubic and hexagonal phases of ZnSe and ZnS are synthesized by dip process at room temperature. Polycrystalline nature of the films was observed from XRD. Optical band gap of Zn-Se-S thin film was found to be in between individual band gaps of ZnSe and ZnS. The electrical conductivity was found to be in the range of 10(-5)-10(-2) (Omega cm)(-1). Due to above properties, these films find applications as a buffer layer in solar cells. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：9425 / 9427

页数：3

共 35 条

[1] Photoelectrochemical properties of electrodeposited CdSe and CdSe/ZnSe thin films in sulphide-polysulphide and ferro-ferricyanide redox systems [J].