Bulk GaN layers grown on oxidized silicon by vapor-phase epitaxy in a hydride-chloride system

被引：2

作者：

Zhilyaev, YV ^{[1
]}

Raevskii, SD

Grabko, DZ

Leu, DS

Kompan, ME

Yusupova, SA

Shcheglov, MP

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] State Univ Moldova, Kishinev, Moldova

[3] Moldavian Acad Sci, Kishinev, Moldova

来源：

TECHNICAL PHYSICS LETTERS | 2005年 / 31卷 / 05期

关键词：

Silicon; Charge Carrier; Mechanical Strength; Emission Band; Carrier Density;

D O I：

10.1134/1.1931770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bulk GaN layers with a thickness of up to 1.5 mm and a lateral size of 50 mm were grown by hydride-chloride vapor-phase epitaxy (HVPE). The best samples show a half-width (FWHM) of the X-ray rocking curve of omega(theta) = 27', a charge carrier density of similar to 8 x 10(19) cm(-3), and a mobility of similar to 50 cm(2) /(V s). The photoluminescence spectra of the obtained epitaxial GaN layers exhibit an edge emission band at 348 eV. The HVPE layers are characterized by a high mechanical strength: H-V = 14 GPa. (C) 2005 Pleiades Publishing, Inc.

引用

页码：367 / 369

页数：3