Bulk GaN layers grown on oxidized silicon by vapor-phase epitaxy in a hydride-chloride system

被引：2
|
作者：
Zhilyaev, YV [1 ]
Raevskii, SD
Grabko, DZ
Leu, DS
Kompan, ME
Yusupova, SA
Shcheglov, MP
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] State Univ Moldova, Kishinev, Moldova
[3] Moldavian Acad Sci, Kishinev, Moldova
来源：
TECHNICAL PHYSICS LETTERS | 2005年 / 31卷 / 05期
关键词：
Silicon; Charge Carrier; Mechanical Strength; Emission Band; Carrier Density;
D O I：
10.1134/1.1931770
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Bulk GaN layers with a thickness of up to 1.5 mm and a lateral size of 50 mm were grown by hydride-chloride vapor-phase epitaxy (HVPE). The best samples show a half-width (FWHM) of the X-ray rocking curve of omega(theta) = 27', a charge carrier density of similar to 8 x 10(19) cm(-3), and a mobility of similar to 50 cm(2) /(V s). The photoluminescence spectra of the obtained epitaxial GaN layers exhibit an edge emission band at 348 eV. The HVPE layers are characterized by a high mechanical strength: H-V = 14 GPa. (C) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：367 / 369
页数：3
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