Operation of a semiconductor opening switch at ultrahigh current densities

The operation of a semiconductor opening switch (SOS diode) at cutoff current densities of tens of kA/cm(2) is studied. In experiments, the maximum reverse current density reached 43 kA/cm(2) for similar to 40 ns. Experimental data on SOS diodes with a p (+)-p-n-n (+) structure and a p-n junction depth from 145 to 180 mu m are presented. The dynamics of electron-hole plasma in the diode at pumping and current cutoff stages is studied by numerical simulation methods. It is shown that current cutoff is associated with the formation of an electric field region in a thin (similar to 45 mu m) layer of the structure's heavily doped p-region, in which the acceptor concentration exceeds 10(16) cm(-3), and the current cutoff process depends weakly on the p-n junction depth.