Temperature-induced variation of magnetoresistance and tunneling current in La2/3Sr1/3MnO3/LaMnO3 (ZrO2)/La2/3Sr1/3MnO3 junctions

被引：1

作者：

Jin, Yuan ^{[1
,2
]}

Cui, Xiaopeng ^{[1
,2
]}

Gao, Yuze ^{[1
,2
]}

Fang, Yifei ^{[1
,2
]}

Lu, Bo ^{[3
]}

Cao, Shixun ^{[1
,2
]}

Zhang, Jincang ^{[1
,2
,3
]}

机构：

[1] Mat Genome Inst, Shanghai 200444, Peoples R China

[2] Dept Phys, Shanghai 200444, Peoples R China

[3] Shanghai Univ, Lab Microstruct, Shanghai 200444, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2015年 / 215卷

基金：

中国国家自然科学基金;

关键词：

Manganites; Inlayer masking thin films; Magnetoresistance; Tunneling current; THIN-FILMS; CMR MANGANITES; PHYSICS;

D O I：

10.1016/j.ssc.2015.05.002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the temperature dependence of the magnetotransport properties for the La2/3Sr1/3MnO3/ZrO2/La2/3Sr1/3MnO3 and La2/3Sr1/3MnO3/LaMnO3/La2/3Sr1/3MnO3 trilayer junctions. The ferromagnetic La2/3Sr1/3MnO3 has been selected as the top and bottom ferromagnetic metallic layers, along with the antiferromagnetic LaMnO3 spacer and nonmagnetic ZrO2 spacer as tunneling barriers, respectively. For different tunneling barriers, the magnetoresistance and the tunneling current of the junctions show different phenomena with decreasing temperature. Temperature dependence of magnetoresistance of the La2/3Sr1/3MnO3/ZrO2/La2/3Sr1/3MnO3 structure shows double peaks while that of La2/3Sr1/3MnO3/ LaMnO3/La2/3Sr1/3MnO3 displays one peak. Furthermore, the tunneling current is correlated with the magnetoresistance. These findings may find potential uses in magnetic data storages and magnetic switches. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：12 / 16

页数：5

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