Synthesis of Few-Layer Graphene Using DC PE-CVD

被引:2
作者
Kim, Jeong Hyuk [1 ]
Castro, Edward Joseph D. [1 ]
Hwang, Yong Gyoo [1 ]
Lee, Choong Hun [1 ]
机构
[1] Wonkwang Univ, Reg Innovat Ctr Next Generat Ind Radiat Technol, Div Microelect & Display Technol, Iksan 570479, South Korea
来源
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词
DC PECVD; graphene; Raman spectroscopy; Ni substrate; RAMAN-SPECTROSCOPY; SINGLE-LAYER;
D O I
10.1063/1.3666619
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Few layer graphene (FLG) had been successfully grown on polycrystalline Ni films or foils on a large scale using DC Plasma Enhanced Chemical Vapor Deposition (DC PE-CVD) as a result of the Raman spectra drawn out of the sample. The size of graphene films is dependent on the area of the Ni film as well as the DC PE-CVD chamber size. Synthesis time has an effect on the quality of graphene produced. However, further analysis and experiments must be pursued to further identify the optimum settings and conditions of producing better quality graphene. Applied plasma voltage on the other hand, had an influence on the minimization of defects in the graphene grown. It has also presented a method of producing a free standing PMMA/graphene membrane on a FeCl3(aq) solution which could then be transferred to a desired substrate.
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页数:2
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