Structural and electrical properties of p-type ZnO thin films

被引：0
|
作者：
Hamid, H. Abdul [1 ]
Abdullah, M. J. [1 ]
Aziz, A. Abdul [1 ]
机构：
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, Minden 11800, Penang, Malaysia
来源：
CURRENT ISSUES OF PHYSICS IN MALAYSIA | 2008年 / 1017卷
关键词：
ZnO; electrical properties; sputtering; structural properties;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The codoped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200 degrees C to 600 degrees C for 1 hour in nitrogen and oxygen gas mixture. P - type conduction of Al-N codoped ZnO thin films were obtained at 300 degrees C with the lowest resistivity of 3.412 x 10(-3) Omega.cm and highest carrier Concentration of 1.54 x 10(22) cm(-3). Structural investigation was carried out by atomic force microscope (AFM) and X - ray diffraction (XRD). Results showed that heat treatment had influenced the structure of the films.
引用
收藏
页码：134 / 138
页数：5
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