Self-organized growth of InGaAs/GaAs/AlGaAs quantum dot heterostructures by metalorganic chemical vapor deposition

被引：2

作者：

Joo, HB

Yang, GM ^{[1
]}

Lim, DH

Kim, JH

Kim, KS

Lim, KY

Suh, EK

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea

[2] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561756, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 194卷 / 02期

关键词：

quantum dot; InGaAs; GaAs; Stranski-Krastanow method; laser diode;

D O I：

10.1016/S0022-0248(98)00721-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-organized In(0.6)G(0.4)As/GaAs/AlGaAs quantum dot (QD) heterostructures were grown by metalorganic chemical vapor deposition using the Stranski-Krastanow growth mode. The atomic force microscopy image shows that the quantum dot structures are formed. The room-temperature photoluminescence (PL) measurement was employed to establish the optimized growth condition for QD structures. A strong PL emission was obtained at room temperature. Blueshifts in the PL emission from InGaAs QDs are observed as a results of postgrowth annealing and also when raising the upper cladding layer growth temperatures. Also, the strong electroluminescence at room temperature shows the possibility of QD optical device. Using the optimized growth condition, a full laser structure was fabricated by selective oxidation. (C) 1998 Elsevier Science B.V. All rights reserved.

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页码：161 / 165

页数：5

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