Lattice bending in monocrystalline GaAs induced by nanoscratching

被引：24

作者：

Wu, Y. Q. ^{[1
]}

Huang, H. ^{[1
]}

Zou, J. ^{[1
,2
]}

机构：

[1] Univ Queensland, Sch Mech & Min Engn, Gold Coast, Qld 4072, Australia

[2] Univ Queensland, Ctr Microscopy & Microanal, Gold Coast, Qld 4072, Australia

来源：

MATERIALS LETTERS | 2012年 / 80卷

关键词：

GaAs; Semiconductors; Nanoscratch; Deformation; Lattice bending; Electron microscopy; TRANSMISSION ELECTRON-MICROSCOPY; DEFORMATION; INDENTATION; MICROSTRUCTURE; DISLOCATION; PLASTICITY;

D O I：

10.1016/j.matlet.2012.04.057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deformation behaviors of monocrystalline GaAs induced by nanoscratching were investigated by means of cross-sectional transmission electron microscopy. Lattice bending was observed for the first time at atomic scale in semiconductor materials. The mechanism of lattice bending was discussed. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：187 / 190

页数：4

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