Electronic structures and optical properties of Si- and Sn-doped β-Ga2O3: A GGA+U study

The electronic structures and optical properties of beta-Ga2O3 and Si- and Sn-doped beta-Ga2O3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of beta-Ga2O3 are in good agreement with experimental results. Si- and Sn-doped beta-Ga2O3 tend to form under O-poor conditions, and the formation energy of Si-doped beta-Ga2O3 is larger than that of Sn-doped beta-Ga2O3 because of the large bond length variation between Ga-O and Si-O. Si- and Sn-doped beta-Ga2O3 have wider optical gaps than beta-Ga2O3, due to the Burstein-Moss effect and the bandgap renormalization effect. Si-doped beta-Ga2O3 shows better electron conductivity and a higher optical absorption edge than Sn-doped beta-Ga2O3, so Si is more suitable as a dopant of n-type beta-Ga2O3, which can be applied in deep-UV photoelectric devices.