Anodized Aluminum Oxide Thin Films for Room-Temperature-Processed, Flexible, Low-Voltage Organic Non-Volatile Memory Elements with Excellent Charge Retention

被引：104

作者：

Kaltenbrunner, Martin ^{[1
]}

Stadler, Philipp ^{[2
]}

Schwoediauer, Reinhard

Hassel, Achim Walter ^{[1
]}

Sariciftci, Niyazi Serdar ^{[2
]}

Bauer, Siegfried

机构：

[1] Johannes Kepler Univ Linz, Inst Chem Technol Inorgan Mat, A-4040 Linz, Austria

[2] Johannes Kepler Univ Linz, Linz Inst Organ Solarcells, A-4040 Linz, Austria

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 42期

关键词：

FIELD-EFFECT TRANSISTORS; LARGE-AREA; GATE DIELECTRICS; MATRIX; PRESSURE; PHOTOEMISSION; INTEGRATION; EMISSION; DISPLAYS; DEVICES;

D O I：

10.1002/adma.201103189

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A flexible organic non-volatile memory transistor on a 50 mu m polyethylene naphtalate (PEN) substrate is presented. The gate and floating gate dielectric are prepared by potentiostatic anodization of aluminum, resulting in dense aluminum oxide high-k dielectric films. Such memory transistors show tuneable program and erase voltages and a large charge retention time.

引用

页码：4892 / 4896

页数：5

共 16 条

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[8] Solution-processed ZnO thin films for low voltage and low temperature application in flexible resistive random access memory
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