Anodized Aluminum Oxide Thin Films for Room-Temperature-Processed, Flexible, Low-Voltage Organic Non-Volatile Memory Elements with Excellent Charge Retention

被引：104
作者：
Kaltenbrunner, Martin [1 ]
Stadler, Philipp [2 ]
Schwoediauer, Reinhard
Hassel, Achim Walter [1 ]
Sariciftci, Niyazi Serdar [2 ]
Bauer, Siegfried
机构：
[1] Johannes Kepler Univ Linz, Inst Chem Technol Inorgan Mat, A-4040 Linz, Austria
[2] Johannes Kepler Univ Linz, Linz Inst Organ Solarcells, A-4040 Linz, Austria
来源：
ADVANCED MATERIALS | 2011年 / 23卷 / 42期
关键词：
FIELD-EFFECT TRANSISTORS; LARGE-AREA; GATE DIELECTRICS; MATRIX; PRESSURE; PHOTOEMISSION; INTEGRATION; EMISSION; DISPLAYS; DEVICES;
D O I：
10.1002/adma.201103189
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A flexible organic non-volatile memory transistor on a 50 mu m polyethylene naphtalate (PEN) substrate is presented. The gate and floating gate dielectric are prepared by potentiostatic anodization of aluminum, resulting in dense aluminum oxide high-k dielectric films. Such memory transistors show tuneable program and erase voltages and a large charge retention time.
引用
收藏
页码：4892 / 4896
页数：5
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