Single-event-upset and alpha-particle emission rate measurement techniques

被引：12

作者：

Gordon, Michael S. ^{[1
]}

Rodbell, Kenneth P. ^{[1
]}

Heide, David F. ^{[1
]}

Cabral, Cyril, Jr. ^{[1
]}

Cannon, Ethan H. ^{[2
]}

Reinhardt, Daniel D. ^{[2
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Syst & Technol Grp, Essex Jct, VT 05452 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 2008年 / 52卷 / 03期

关键词：

D O I：

10.1147/rd.523.0265

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The susceptibility of modern integrated-circuit devices to single-event upsets (SEUs) depends on both the alpha-particle emission rate and the energy of the alpha-particles emitted. In. addition, the terrestrial neutron energy and flux, which produce secondary charged fragments in the device and circuit at the location of operation, contribute to the SEU rate. In this paper, we discuss methods that are used to measure alpha-particle emissivity from semiconductor and packaging materials, as well as methods that we used and our results for life testing and accelerated SEU testing of modern devices.

引用

页码：265 / 273

页数：9

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