Fabrication and characterization of thick porous silicon layers for rf circuits

被引：9

作者：

You, SZ ^{[1
]}

Long, YF

Xu, YS

Zhu, ZQ

Shi, YL

Lai, ZS

Li, ZF

Lu, W

机构：

[1] E China Normal Univ, Dept Elect Engn, Shanghai 200062, Peoples R China

[2] Acad Sinica, Shanghai Inst Tech Phys, Shanghai 200062, Peoples R China

[3] Acad Sinica, Shanghai Inst Microsyst & Informat Technol, Shanghai 200062, Peoples R China

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2003年 / 108卷 / 1-3期

关键词：

porous silicon (PS); Raman spectrum; X-ray diffraction; patterning;

D O I：

10.1016/j.sna.2003.06.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Porous silicon (PS) has been considered as a promising material for application to rf devices recently. In this paper, we present the characterization of PS layer in terms of Raman Spectroscopy and X-ray diffraction. The results obtained from the 400 mum-thick PS samples showed a shift of Raman peak position to 519 cm(-1) and a lattice expansion of 0.1% compared with single crystal Si(1 0 0). Coplanar waveguides (CPWs) have been formed on the PS layers in attempt to obtain low-loss transmission lines for rf circuits. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：117 / 120

页数：4

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