Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High-Electron-Mobility Transistors with GaN Interlayer

被引：4
|
作者：
Tang, Jinjin [1 ]
Liu, Guipeng [1 ]
Mao, Bangyao [1 ]
Zhao, Guijuan [1 ]
Yang, Jianhong [1 ]
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2022年 / 16卷 / 04期
基金：
中国国家自然科学基金;
关键词：
GaN-based high-electron-mobility transistors; intersub-band scattering; mobility; 2D electron gases;
D O I：
10.1002/pssr.202100573
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Herein, the physical mechanism of the GaN interlayer for improving 2D electron gas (2DEG) mobility in the InGaN channel using an intersub-band scattering model is systematically elucidated. The model takes into account various scattering mechanisms between the first four sub-bands, in which the wavefunction of each sub-band is obtained by self-consistently solving 1D Schrodinger-Poisson equations. The total 2DEG mobility is obtained by averaging the sub-band mobility by the percentage of electrons in the different sub-bands. The effect of introducing different thicknesses of the GaN interlayer on the mobility limited by various scattering mechanisms is discussed in detail, especially polar optical phonon scattering and alloy disorder scattering. The calculated results are well supported by the reported experimental data, validating the correctness of the model.
引用
收藏
页数：6
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