Electrically pumped heterogeneously integrated Si/III-V evanescent lasers with micro-loop mirror reflector

被引：13
|
作者：
Zheng, Yunan [1 ,2 ]
Ng, Doris Keh-Ting [2 ]
Wei, Yongqiang [2 ]
Wang Yadong [2 ]
Huang, Yingyan [3 ]
Tu, Yongming [1 ,2 ]
Lee, Chee-Wei [2 ]
Liu, Boyang [3 ]
Ho, Seng-Tiong [1 ,2 ]
机构：
[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA
[2] Data Storage Inst, Singapore 117608, Singapore
[3] OptoNet Inc, Evanston, IL 60201 USA
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 01期
关键词：
SILICON;
D O I：
10.1063/1.3607309
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An electrically pumped heterogeneously integrated Si/AlGaInAs evanescent laser with micro-loop mirror (MLM) as high reflectors at both ends is experimentally demonstrated. Finite-difference time-domain simulation shows that 98% reflectivity can be achieved with micro-loop mirror formed by single-mode silicon-on-insulator (SOI) waveguides. The laser based on a Si/III-V hybrid gain waveguide and passive SOI MLM reflectors is fabricated and single-mode continuous-wave (CW) lasing is achieved at room temperature with a lasing threshold current density of 2.5 kA/cm(2). (C) 2011 American Institute of Physics. [doi:10.1063/1.3607309]
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页数：3
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