Electrically pumped heterogeneously integrated Si/III-V evanescent lasers with micro-loop mirror reflector

被引：13

作者：

Zheng, Yunan ^{[1
,2
]}

Ng, Doris Keh-Ting ^{[2
]}

Wei, Yongqiang ^{[2
]}

Wang Yadong ^{[2
]}

Huang, Yingyan ^{[3
]}

Tu, Yongming ^{[1
,2
]}

Lee, Chee-Wei ^{[2
]}

Liu, Boyang ^{[3
]}

Ho, Seng-Tiong ^{[1
,2
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA

[2] Data Storage Inst, Singapore 117608, Singapore

[3] OptoNet Inc, Evanston, IL 60201 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 01期

关键词：

SILICON;

D O I：

10.1063/1.3607309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electrically pumped heterogeneously integrated Si/AlGaInAs evanescent laser with micro-loop mirror (MLM) as high reflectors at both ends is experimentally demonstrated. Finite-difference time-domain simulation shows that 98% reflectivity can be achieved with micro-loop mirror formed by single-mode silicon-on-insulator (SOI) waveguides. The laser based on a Si/III-V hybrid gain waveguide and passive SOI MLM reflectors is fabricated and single-mode continuous-wave (CW) lasing is achieved at room temperature with a lasing threshold current density of 2.5 kA/cm(2). (C) 2011 American Institute of Physics. [doi:10.1063/1.3607309]

引用

页数：3

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