Piezo-magnetoelectric effects in p-doped semiconductors -: art. no. 033203

被引：51

作者：

Bernevig, BA ^{[1
]}

Vafek, O ^{[1
]}

机构：

[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.72.033203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We predict the appearance of a uniform magnetization in strained three-dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.

引用

页数：4

共 23 条

[1]

[Anonymous], 1984, ADV QUANTUM MECH

[2]

Aronov A. G., 1991, Soviet Physics - JETP, V73, P537

[3] Theoretical investigations of spin splittings in asymmetric AlSb/InAs/GaSb heterostructures and the possibility of electric field induced magnetization [J].