Enhancement of the Transmission of Piezoelectric Micromachined Ultrasonic Transducer With an Isolation Trench

被引:34
作者
Wang, Mingjun [1 ]
Zhou, Yufeng [1 ]
Randles, Andrew [2 ]
机构
[1] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
[2] Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore
关键词
Piezoelectric micromachined ultrasonic transducer (pMUT); isolation trench; output pressure; resonant frequency; aluminum nitride; residual stress; CROSSTALK REDUCTION; ACOUSTIC CROSSTALK; THIN-FILMS; MICROSENSORS; FABRICATION; DEFLECTION; MEMBRANE;
D O I
10.1109/JMEMS.2016.2577038
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new piezoelectric micromachined ultrasonic transducer (pMUT) with an isolation trench between cells was proposed to improve the output pressure. A 2-D finite-element model was utilized to evaluate and compare the performance of the conventional design with fully clamped boundary and the trench design. It shows that the trench design can improve the membrane displacement or output pressure of pMUTs without a significant change in the resonant frequency; 8 x 8 aluminum nitride (AlN)-based pMUTs arrays with fully clamped boundary design and the isolation trench were fabricated and characterized. An impulse response of the pMUTs array was first employed to determine the resonant frequency. A 200-cycle burst at the resonant frequency was then delivered to pMUTs and the acoustic output pressure was measured by a hydrophone. The trench design could increase the output pressure by similar to 76% with a shift of its center frequency by only 0.03 MHz. The nonlinear relationship between pressure output and applied high voltage still exists in the trench design. The presence of residual stress in the membrane, and substrate during fabrication was found to have little impact on the displacement and resonant frequency of pMUT. In summary, the presence of isolation trench can reduce the deflection-induced tensile stress on the edge of the membrane and subsequently improve the performance of pMUTs. [2016-0001]
引用
收藏
页码:691 / 700
页数:10
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